Shockley-Frank stacking faults in 6H-SiC
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چکیده
منابع مشابه
Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the exciton...
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Correlation in crystallite sizes and defects of epitaxial ZnO layers deposited on 6H-SiC substrates has been addressed. The biaxial strain governs the ZnO crystallites for the layer thickness of 400 nm. The misfit dislocations were observed in nucleation and theater is the columnar growth mode diffracted in transmission electron microscopy. The columnar growth mode is a symbol of stacking fault...
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The controlled growth of SiC heteropolytypic structures consisting of hexagonal and cubic polytypes has been performed by solid-source molecular-beam epitaxy. On on-axis substrates, 4H/3C/4H–SiC~0001! and 6H/3C/6H–SiC~0001! structures were obtained by first growing the 3C–SiC layer some nanometer thick at lower substrate temperatures (T51550 K) and Si-rich conditions and a subsequent growth of ...
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تاریخ انتشار 2012